AON6536 30v n-channel mosfet general description product summary i d (at v gs =10v) 55a r ds(on) (at v gs =10v) < 7m w r ds(on) (at v gs =4.5v) < 10m w 100% uis tested 100% rg tested symbol v ds v drain-source voltage v ds absolute maximum ratings t a =25c unless otherwise noted 30v maximum 20 gate-source voltage units v v 30 the AON6536 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. parameter pin1 dfn5x6 top view bottom view g ds top view 12 3 4 87 6 5 v gs i dm i as e as t j , t stg parameter symbol t 10s steady-state steady-state r q jc maximum junction-to-ambient a d c/w 18 22 55 maximum junction-to-case avalanche energy l=0.05mh c t a =70c t c =100c 20 gate-source voltage i d v 2.8 40 3.5 55 5.5 c/w 135 w 17.5 31 a 35 a w 35.5 a avalanche current c p dsm p d 3.6 mj t a =70c 14 max thermal characteristics 22 typ junction and storage temperature range power dissipation a units c c/w -55 to 150 t c =100c pulsed drain current c t c =25c t a =25c 35 t a =25c r q ja maximum junction-to-ambient a t c =25c continuous drain current i dsm continuous drain current power dissipation b pin1 dfn5x6 top view bottom view g ds top view 12 3 4 87 6 5 rev0 : aug 2012 www.aosmd.com page 1 of 6
AON6536 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.5 2.0 2.5 v i d(on) 135 a 5.6 7 t j =125c 8.6 11 7.8 10 m w g fs 58 s v sd 0.72 1 v i s 40 a c iss 1210 pf c oss 210 pf c rss 100 pf r g 0.6 1.2 1.8 w q g (10v) 19.5 30 nc q g (4.5v) 9 15 nc q gs 4.5 nc q gd 3.5 nc t d(on) 6 ns t r 3 ns on state drain current v gs =10v, v ds =5v electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 m a, v gs =0v i dss zero gate voltage drain current m a gate-body leakage current v ds =0v, v gs =20v v ds =v gs i d =250 m a r ds(on) static drain-source on-resistance v gs =10v, i d =20a m w v gs =4.5v, i d =20a forward transconductance v ds =5v, i d =20a diode forward voltage i s =1a,v gs =0v maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =15v, f=1mhz output capacitance reverse transfer capacitance gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =10v, v ds =15v, i d =20a total gate charge gate source charge gate drain charge turn-on delaytime v gs =10v, v ds =15v, r l =0.75 w , turn-on rise time t r 3 ns t d(off) 21.5 ns t f 3 ns t rr 9 ns q rr 13 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =20a, di/dt=500a/ m s v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =20a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environm ent with t a =25 c. the power dissipation p dsm is based on r q ja t 10s and the maximum allowed junction temperature of 1 50 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and is more u seful in setting the upper dissipation limit for cases where additional heatsinking i s used. c. single pulse width limited by junction temperature t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtaine d using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environm ent with t a =25 c. rev0: aug 2012 www.aosmd.com page 2 of 6
AON6536 channel: typical electrical and thermal characteristics 17 52 10 0 18 0 10 20 30 40 50 60 0.5 1.5 2.5 3.5 4.5 5.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 2 4 6 8 10 12 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3.5v 10v 3v 4.5v 6v 40 0 10 20 30 40 50 60 0.5 1.5 2.5 3.5 4.5 5.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 2 4 6 8 10 12 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 0 3 6 9 12 15 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =20a 25 c 125 c 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3.5v 10v 3v 4.5v 6v rev0: aug 2012 www.aosmd.com page 3 of 6
AON6536 channel: typical electrical and thermal characteristics 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 1ms 100us dc r ds(on) limited t j(max) =150 c t c =25 c 10 m s 10ms 0 2 4 6 8 10 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 300 600 900 1200 1500 1800 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) c oss c rss v ds =15v i d =20a t j(max) =150 c t c =25 c 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 1ms 100us dc r ds(on) limited t j(max) =150 c t c =25 c 10 m s 10ms 0 2 4 6 8 10 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 300 600 900 1200 1500 1800 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) c oss c rss v ds =15v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t c =25 c r q jc =3.5 c/w rev0: aug 2012 www.aosmd.com page 4 of 6
AON6536 channel: typical electrical and thermal characteristics 1 10 100 1000 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 14: current de-rating (note f) t a =25 c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 10 100 1000 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 14: current de-rating (note f) t a =25 c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) t a =25 c t a =150 c t a =100 c t a =125 c r q ja =55 c/w rev0: aug 2012 www.aosmd.com page 5 of 6
AON6536 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev0: aug 2012 www.aosmd.com page 6 of 6
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